The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Dec. 04, 1998
Barney M. Cohen, Santa Clara, CA (US);
Kenny King-tai Ngan, Fremont, CA (US);
Xiangbing LI, San Jose, CA (US);
Barney M. Cohen, Santa Clara, CA (US);
Kenny King-Tai Ngan, Fremont, CA (US);
Xiangbing Li, San Jose, CA (US);
Applied Materials, INC, Santa Clara, CA (US);
Abstract
The present invention provides a method and apparatus for precleaning a patterned substrate with a plasma comprising a mixture of argon, helium, and hydrogen. Addition of helium to the gas mixture of argon and hydrogen surprisingly increases the etch rate in comparison to argon/hydrogen mixtures. Etch rates are improved for argon concentrations below about 75% by volume. RF power is capacitively and inductively coupled to the plasma to enhance control of the etch properties. Argon, helium, and hydrogen can be provided as separate gases or as mixtures.