The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Sep. 22, 1999
Volker Becker, Marxzell, DE;
Franz Laermer, Stuttgart, DE;
Andrea Schilp, Schwaebisch Gmuend, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method is proposed for etching a first silicon layer () that is provided with an etching mask () for defining lateral recesses (). In a first plasma etching process, trenches () are produced in the region of the lateral recesses () by anisotropic etching. The first etching process comes virtually to a standstill as soon as a separating layer (), buried between the first silicon layer () and a further silicon layer (), is reached. This separating layer is thereupon etched through in exposed regions () by a second etching process. A subsequent third etching process then etches the further silicon layer (). In this manner, free-standing structures for sensor elements can be produced in a simple process which is completely compatible with the method steps in IC integration technology.