The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2006

Filed:

Mar. 28, 2003
Applicants:

Emmanuel DE Chambost, Limoures, FR;

Chrystel Hombourger, Paris, FR;

Juan Montero, Noisy le Grand, FR;

Pierre Monsallut, Paris, FR;

Pierre-francois Staub, Paris, FR;

Inventors:

Emmanuel De Chambost, Limoures, FR;

Chrystel Hombourger, Paris, FR;

Juan Montero, Noisy le Grand, FR;

Pierre Monsallut, Paris, FR;

Pierre-Francois Staub, Paris, FR;

Assignee:

Cameca, Courbevoie, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/256 (2006.01); G01N 23/225 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a device for measuring the X-ray emission produced by an object, or specimen, exposed to an electron beam. The device includes at least one subassembly or electron column, which is used to produce and control the electron beam, and a support for positioning the object measured. It also includes spectral analysis means for analyzing the X-rays emitted by the specimen to be analyzed and optical means for controlling the position of the specimen relative to the beam. The energy of the beam created and the intensity of the electron current obtained are used to meet the sensitivity, resolution and precision requirements demanded by semiconductor manufacturers. The invention applies especially to checking the fabrication of an integrated-circuit wafer.


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