The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Oct. 08, 1999
Kazue Takahashi, Kudamatsu, JP;
Toshio Masuda, Toride, JP;
Tetsunori Kaji, Tokuyama, JP;
Ken'etsu Yokogawa, Tsurugashima, JP;
Kazue Takahashi, Kudamatsu, JP;
Toshio Masuda, Toride, JP;
Tetsunori Kaji, Tokuyama, JP;
Ken'etsu Yokogawa, Tsurugashima, JP;
Hitachi, Ltd., Tokyo, unknown;
Abstract
In an oxide film etching process, a plasma having a suitable ratio of CF, CF, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.