The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Oct. 28, 2004
Applicant:
Chen-hsiung Yang, Taipei Hsien, TW;
Inventor:
Chen-Hsiung Yang, Taipei Hsien, TW;
Assignee:
Touch Micro-System Technology Inc., Taoyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of etching cavities having different aspect ratios. An etching stop layer is formed on the bottom surface of a substrate, and a mask pattern is formed on the top surface of the substrate. The mask pattern includes a plurality of sacrificial patterns positioned on both a first cavity predetermined region and a second cavity predetermined region. Then, an etching process is performed to remove the substrate not covered by the mask layer. Then, the etching stop layer is removed, as well as the sacrificial patterns and the substrate covered by the sacrificial patterns.