The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Jul. 28, 2003
Chich Shang Chang, Taoyuan, TW;
Chi-shen Lee, Hsinchu, TW;
Shun-fa Huang, Changhua, TW;
Jung Fang Chang, Tainan, TW;
Wen-chih HU, Hsinchu, TW;
Liang-tang Wang, Tainan, TW;
Chai-yuan Sheu, Tainan, TW;
Chich Shang Chang, Taoyuan, TW;
Chi-Shen Lee, Hsinchu, TW;
Shun-Fa Huang, Changhua, TW;
Jung Fang Chang, Tainan, TW;
Wen-Chih Hu, Hsinchu, TW;
Liang-Tang Wang, Tainan, TW;
Chai-Yuan Sheu, Tainan, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.