The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2006

Filed:

May. 08, 2003
Applicants:

Shinichi Hamaguchi, Tokyo, JP;

Susumu Goto, Tokyo, JP;

Osamu Kamimura, Tokyo, JP;

Yasunari Sohda, Tokyo, JP;

Inventors:

Shinichi Hamaguchi, Tokyo, JP;

Susumu Goto, Tokyo, JP;

Osamu Kamimura, Tokyo, JP;

Yasunari Sohda, Tokyo, JP;

Assignees:

Advantest Corp., Tokyo, JP;

Canon Kabushiki Kaisha, Tokyo, JP;

Hitachi, Ltd, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21G 5/00 (2006.01); G21K 5/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electron beam exposure apparatus for exposing wafer with an electron beam, includes: a first electromagnetic lens system for making the electron beam incident substantially perpendicularly on a first plane be incident on a second plane substantially perpendicularly; a second electromagnetic lens system for making the electron beam that was substantially perpendicularly incident on the second plane be incident on the wafer substantially perpendicularly; a rotation correction lens provided within the first electromagnetic lens system for correcting rotation of the electron beam caused by at least the first electromagnetic lens system; a deflection system for deflecting the electron beam to a position on the wafer; and a deflection-correction optical system provided within the second electromagnetic lens system for correcting deflection aberration caused by the deflection system.


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