The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2006

Filed:

Apr. 19, 2002
Applicants:

Hien-minh Huu Le, San Jose, CA (US);

Keith A. Miller, Sunnyvale, CA (US);

Hoa T. Kieu, Sunnyvale, CA (US);

Kenny King-tai Ngan, Fremont, CA (US);

Inventors:

Hien-Minh Huu Le, San Jose, CA (US);

Keith A. Miller, Sunnyvale, CA (US);

Hoa T. Kieu, Sunnyvale, CA (US);

Kenny King-Tai Ngan, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a magnetron sputtering chamber, a substrate is placed in the chamber and a deposition shield is maintained about the substrate to shield internal surfaces in the chamber. The deposition shield has a textured surface that may be formed by a hot pressing process or by a coating process, and that allows the accumulated sputtered residues to stick thereto without flaking off. An electrical power is applied to a high density sputtering target facing the substrate to form a plasma in the chamber while a rotating magnetic field of at least about 300 Gauss is applied about the target to sputter the target. Advantageously, the sputtering process cycle can be repeated for at least about 8,000 substrates without cleaning the internal surfaces in the chamber, and even while still generating an average particle count on each processed substrate of less than 1 particle per 10 cmof substrate surface area.


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