The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Sep. 24, 2003
Dun-nian Yaung, Taipei, TW;
Shou-gwo Wuu, Hsin-Chu, TW;
Ho-ching Chen, Hsinchu, TW;
Chien-hsien Tseng, Hsinchu, TW;
Jeng-shyan Lin, Tainan, TW;
Dun-Nian Yaung, Taipei, TW;
Shou-Gwo Wuu, Hsin-Chu, TW;
Ho-Ching Chen, Hsinchu, TW;
Chien-Hsien Tseng, Hsinchu, TW;
Jeng-Shyan Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.