The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Jan. 23, 2004
Yu Min Lin, Jhongli, TW;
Ming-fang Wang, Shengang Township, Taichung County, TW;
Kun-chih Lee, Sinhua Township, Tainan County, TW;
Ming-ho Yang, Hsin-Chu, TW;
Liang-gi Yo, Hsin-Chu, TW;
Shih-chang Chen, Jhudong Township, Hsinchu County, TW;
Karen L. Mai, Jhonghe, TW;
Yu Min Lin, Jhongli, TW;
Ming-Fang Wang, Shengang Township, Taichung County, TW;
Kun-Chih Lee, Sinhua Township, Tainan County, TW;
Ming-Ho Yang, Hsin-Chu, TW;
Liang-Gi Yo, Hsin-Chu, TW;
Shih-Chang Chen, Jhudong Township, Hsinchu County, TW;
Karen L. Mai, Jhonghe, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for fabricating a portion of an integrated circuit on a semiconductor substrate. The method includes cleaning the surface of the substrate, and forming a thin insulate over the substrate. The method also includes depositing a high dielectric constant (high-k) material over the thin insulate, and then performing a hydrogen-based anneal on the high-k material. The method further includes performing an oxygen-based anneal on the high-k material, wherein the hydrogen-based and oxygen-based anneals occur sequentially.