The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2006

Filed:

Oct. 27, 2003
Applicants:

Fei-gwo Tsai, Tainan, TW;

Wei-zen Chou, Toughe, TW;

Zong-xian Tsai, Hsin-Chu, TW;

Inventors:

Fei-Gwo Tsai, Tainan, TW;

Wei-Zen Chou, Toughe, TW;

Zong-Xian Tsai, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention calculates an optimum etch recipe for etching a product pattern in an opaque material of a photolithographic exposure mask with the objective of achieving optimum CD performance of the product pattern. If, for this optimum etch recipe, the optimum CD performance cannot be achieved, dummy patterns are added to the mask that is used to etch the opaque material. If this latter approach still cannot achieve optimum CD performance, the product pattern to which the dummy pattern has been added is separated into two patterns such that one of these two patterns provides a Cr loading that assures optimum CD performance of the product pattern.


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