The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Dec. 01, 2003
Bruno Ghyselen, Seyssinet-Pariset, FR;
Cécile Aulnette, Grenoble, FR;
Bénédite Osternaud, Saint Egreve, FR;
Yves-mathieu Vaillant, Crolles, FR;
Takeshi Akatsu, Saint Nazaire les Eymes, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
Cécile Aulnette, Grenoble, FR;
Bénédite Osternaud, Saint Egreve, FR;
Yves-Mathieu Vaillant, Crolles, FR;
Takeshi Akatsu, Saint Nazaire les Eymes, FR;
S.O.I.Tec Silicon on Insulator Technologies S.A., Bernin, FR;
Abstract
A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method comprises employing mechanical means to remove part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, as well as donor wafers which can be recycled in accordance with the invention.