The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2006

Filed:

Sep. 07, 2001
Applicants:

Chung-sam Jun, Suwon, KR;

Sang-mun Chon, Sungnam, KR;

Hyoung-jin Kim, Suwon, KR;

Dong-chun Lee, Kyungki-do, KR;

Sang-bong Choi, Suwon, KR;

Sung-gon Ryu, Suwon, KR;

Inventors:

Chung-sam Jun, Suwon, KR;

Sang-mun Chon, Sungnam, KR;

Hyoung-jin Kim, Suwon, KR;

Dong-chun Lee, Kyungki-do, KR;

Sang-bong Choi, Suwon, KR;

Sung-gon Ryu, Suwon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06K 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for correcting color variations on the surface of a wafer, a method for selectively detecting a defect from different patterns, and computer readable recording media for the same are provided. Color variations in images of different parts of a wafer can be corrected using the mean and standard deviation of grey level values for the pixels forming each of the different parts of the wafer. In addition, different threshold values are applied to metal interconnect patterns and spaces of the wafer so that a defect can be selectively detected from the different patterns. Thus, a bridge known as a fatal, or killing defect to a semiconductor device can be detected without also falsely detecting grains as fatal defects. Due to increased defect screening capacity of the methods, the defect detecting method can be further efficiently managed.


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