The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Feb. 25, 2003
Michinobu Mizumura, Kudamatsu, JP;
Ryouji Fukuyama, Kudamatsu, JP;
Mamoru Yakushiji, Kudamatsu, JP;
Yutaka Ohmoto, Hikari, JP;
Katsuya Watanabe, Kudamatsu, JP;
Michinobu Mizumura, Kudamatsu, JP;
Ryouji Fukuyama, Kudamatsu, JP;
Mamoru Yakushiji, Kudamatsu, JP;
Yutaka Ohmoto, Hikari, JP;
Katsuya Watanabe, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
After etching a Si-containing low permittivity insulating film with chlorine based gas, the etched wafer is subjected to an etching aftertreatment process comprising introducing oxygen gas to a vacuum processing chamber with a pressure as low as 0.2 Pa to 1 Pa and a flow rate as low as 5 cc to 20 cc/min, generating plasma within the chamber, heating the wafer 2 being subjected to aftertreatment between 50° C. and 200° C., applying a wafer bias power within the range of 50 W to 200 W, and exposing the wafer to the generated plasma, thereby simultaneously removing the photoresist components, the antireflection film components and the halogen components.