The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Feb. 19, 2004
Applicant:
Thierry Parrassin, Grenoble, FR;
Inventor:
Thierry Parrassin, Grenoble, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
Abstract
A buried oxide layer of an SOI substrate beneath a structure electrically isolated from the rest of a semiconductor device is made to break down so as to open a bias path for the substrate through the structure. It then suffices to connect the electrical ground of the semiconductor device to this bias path so that the ions flow away into the substrate during a focused ion beam treatment of the semiconductor device.