The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Oct. 22, 2001
Tai-peng Lee, Fremont, CA (US);
Chuck Jang, Fremont, CA (US);
Tai-Peng Lee, Fremont, CA (US);
Chuck Jang, Fremont, CA (US);
ProMOS Technologies, Inc., Hsin Chu, TW;
Abstract
A high density plasma chemical vapor deposition (HDP-CVD) process is used to deposit silicon dioxide in trenches of various widths. The thickness of the silicon dioxide filling both narrow and wide trenches is made more uniform by reducing an HDP-CVD etch to deposition ratio. The lowered etch to deposition ratio is achieved by lowering a ratio of oxygen to silane gas, by lowering the power of a high frequency bias signal, and by lowering the total gas flow rate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile