The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Mar. 18, 2004
Chen-chung LI, Taichung, TW;
Jui-chun Weng, Jhongshan District, TW;
Chi-chieh Wang, Taoyuan County, TW;
Tai-kun Kao, Hsinchu, TW;
Chen-Chung Li, Taichung, TW;
Jui-Chun Weng, Jhongshan District, TW;
Chi-Chieh Wang, Taoyuan County, TW;
Tai-Kun Kao, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., HsinChu, TW;
Abstract
An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius R; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Rof a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Rand Rexceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.