The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Apr. 11, 2003
Chou-feng Lee, Hsinchu, TW;
Chou-Feng Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of fabricating a dual damascene structure includes etching a via through a first dielectric layer above a substrate, a barrier layer on the first dielectric layer, and a second dielectric layer on the barrier layer. The via is at least partially filled with a photoresist plug. The plug is etched back. A trench is etched through the second dielectric layer. The trench is aligned with the via. The substrate having the first and second dielectric layers thereon is wet with an acid for a sufficient length of time to remove a via fence formed in the trench. The via and the trench are filled with metal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile