The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Jul. 02, 2002
Yei-ren Chen, Shinjuang, TW;
Hung-wen Chen, Taichung, TW;
Chi-how Wu, Tainan, TW;
Zhi-yong Chang, Hsin Chu, TW;
Yei-Ren Chen, Shinjuang, TW;
Hung-Wen Chen, Taichung, TW;
Chi-How Wu, Tainan, TW;
Zhi-Yong Chang, Hsin Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for in-situ reduction of volatile residual contamination on a semiconductor process wafer following a plasma etching process including providing an ambient controlled chamber for accepting transfer of a semiconductor process wafer under controlled ambient conditions following a plasma etching process; providing a heat exchange surface disposed with the ambient controlled chamber in heat exchange relationship with means for heating the heat exchange surface; transferring a semiconductor process wafer having volatile residual contamination under controlled ambient conditions to the ambient controlled chamber; mounting the semiconductor process wafer in heat exchange relationship with the heat exchange surface; and, heating in-situ the heat exchange surface for a time period to thereby heat the semiconductor process wafer to vaporize the volatile residual contamination on the semiconductor process wafer while simultaneously removing a resulting vapor from the ambient controlled chamber.