The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Jun. 04, 2004
Naoki Shibata, Aichi-ken, JP;
Toshiya Uemura, Aichi-ken, JP;
Makoto Asai, Aichi-ken, JP;
Yasuo Koide, Ibaragi-ken, JP;
Masanori Murakami, Kyoto, JP;
Naoki Shibata, Aichi-ken, JP;
Toshiya Uemura, Aichi-ken, JP;
Makoto Asai, Aichi-ken, JP;
Yasuo Koide, Ibaragi-ken, JP;
Masanori Murakami, Kyoto, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Abstract
An AlN buffer layer; a silicon (Si)-doped GaN high-carrier-concentration nlayer; an Si-doped n-type AlGaN n-cladding layer; an Si-doped n-type GaN n-guide layer; an active layerhaving a multiple quantum well (MQW) structure, and including a GaInN well layer(thickness: about 2 nm) and a GaInN barrier layer(thickness: about 4 nm), the layersandbeing laminated alternately; an Mg-doped GaN p-guide layer; an Mg-doped AlGaN p-cladding layer; and an Mg-doped GaN p-contact layerare successively formed on a sapphire substrate. A p-electrodeis formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.