The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Feb. 20, 2004
Bruno Ghyselen, Seyssinet-Pariset, FR;
Carlos Mazure, St. Nazaire les Eymes, FR;
Emmanuel Arene, Biviers, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
Carlos Mazure, St. Nazaire les Eymes, FR;
Emmanuel Arene, Biviers, FR;
S.O.I.Tec Silicon on Insulator Technologies S.A., Bernin, FR;
Abstract
The invention relates to methods of forming a relaxed or pseudo-relaxed layer on a substrate, wherein the relaxed layer may be a semiconductor material. An implementation of the method includes growing an elastically stressed semiconductor material layer on a donor substrate, forming a glassy layer of a viscous material and bonding it to the stressed layer, removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate, and then heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer. The glassy layer can also be bonded to a receiving substrate so that the structure can be transferred thereto. Implementations also relate to structures obtained from the method.