The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
May. 05, 2004
Chih-hao Wang, Hsin-Chu, TW;
Tzung-lin LI, Pingtung, TW;
Yen-ping Wang, Taipei, TW;
Chun-yen Chang, Hsinchu, TW;
Chih-Hao Wang, Hsin-Chu, TW;
Tzung-Lin Li, Pingtung, TW;
Yen-Ping Wang, Taipei, TW;
Chun-Yen Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods of manufacturing transistor gate electrodes including, in one embodiment, forming a metal layer over first and second regions of a substrate, wherein the first and second regions have different first and second dopant types, respectively. A semiconductor layer is formed over at least a portion of the second region. The metal layer is heated to form a metal gate electrode over the first region, and the metal layer and the semiconductor layer are collectively heated to form a composite metal gate electrode over the second region.