The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Nov. 30, 2004
Benjamin Szu-min Lin, Hsin-Chu, TW;
Benjamin Szu-Min Lin, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A dual phase shifting mask (PSM)/double exposure lithographic process for manufacturing a shrunk semiconductor device. A semiconductor wafer having a photoresist layer coated thereon is provided. A first phase shift mask is disposed over the semiconductor wafer and implementing a first exposure process to expose the photoresist layer to light transmitted through the first phase shift mask so as to form a latent pattern comprising a peripheral unexposed line pattern in the photoresist layer. The first phase shift mask is then replaced with a second phase shift mask and implementing a second exposure process to expose the photoresist layer to light transmitted through the second phase shift mask so as to remove the peripheral unexposed line pattern.