The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Aug. 13, 2003
Chun-cheng Liao, Panchiao, TW;
Yuan-hsun Wu, Jungli, TW;
Chun-Cheng Liao, Panchiao, TW;
Yuan-Hsun Wu, Jungli, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A photolithography method for reducing effects of lens aberration. A photolithography apparatus is provided with a first reticle therein, having at least one first rectangular pattern thereon, a first photolithography is performed on a wafer by the photolithography apparatus to transfer the first rectangular pattern thereonto by simultaneously moving the first reticle and the wafer in a direction parallel to the short sides of the first rectangular pattern. The first reticle is replaced with a second reticle having at least one second rectangular pattern thereon and a second photolithography is performed by the photolithography apparatus to transfer the second rectangular pattern onto the wafer by simultaneously moving the second reticle and the wafer in a 90° plus or minus rotation in a direction parallel to the short sides of the second rectangular pattern.