The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Jan. 04, 2002
Applicants:
Fred Chen, Cupertino, CA (US);
Jeff Farnsworth, Los Gatos, CA (US);
Wen-hao Cheng, Fremont, CA (US);
Inventors:
Fred Chen, Cupertino, CA (US);
Jeff Farnsworth, Los Gatos, CA (US);
Wen-hao Cheng, Fremont, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A mask having a pattern to modify a circuitry feature that has been exposed in a radiation sensitive layer by transmitting modifying radiation to a region of the radiation sensitive layer containing the exposed circuitry feature is described. The mask may reduce subwavelength distortions and proximity effect distortions of the exposed circuitry feature. The mask may be used to manufacture a semiconductor device having circuitry that is based on the modified circuitry feature.