The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Oct. 11, 2001
Applicant:
Ren-guey Hsieh, Pingtung, TW;
Inventor:
Ren-Guey Hsieh, Pingtung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01); G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Within a charged particle beam exposure method for forming a patterned resist layer there is employed separating at least one adjacent pair of fractured pattern elements employed in forming a contiguous latent pattern within a blanket resist layer a gap. By employing the gap, a patterned resist layer formed incident to development of the blanket resist layer is formed with enhanced pattern fidelity and enhanced critical dimension control.
Hsieh, Ren-Guey. (2006). Gap forming pattern fracturing method for forming optical proximity corrected masking layer (U.S. Patent No. 7011926). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7011926
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