The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2006

Filed:

Feb. 19, 2002
Applicants:

William B. Bedwell, San Jose, CA (US);

Nigel P. Hacker, Palo Alto, CA (US);

Roger Y. Leung, San Jose, CA (US);

Nancy Iwamoto, Ramona, CA (US);

Jan Nedbal, San Jose, CA (US);

Songyuan Xie, Newark, CA (US);

Lorenza Moro, Palo Alto, CA (US);

Shyama P. Mukherjee, Morgan Hill, CA (US);

Inventors:

William B. Bedwell, San Jose, CA (US);

Nigel P. Hacker, Palo Alto, CA (US);

Roger Y. Leung, San Jose, CA (US);

Nancy Iwamoto, Ramona, CA (US);

Jan Nedbal, San Jose, CA (US);

Songyuan Xie, Newark, CA (US);

Lorenza Moro, Palo Alto, CA (US);

Shyama P. Mukherjee, Morgan Hill, CA (US);

Assignee:

Honeywell International Inc., Morristown, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [YSiO][ZSiO][HSiO]where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.


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