The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Feb. 11, 2004
Seok-jun Won, Seoul, KR;
Jung-hee Chung, Seoul, KR;
Yong-kuk Jeong, Seoul, KR;
Se-hoon OH, Asan, KR;
Dae-jin Kwon, Seoul, KR;
Cha-young Yoo, Suwon, KR;
Seok-jun Won, Seoul, KR;
Jung-hee Chung, Seoul, KR;
Yong-kuk Jeong, Seoul, KR;
Se-hoon Oh, Asan, KR;
Dae-jin Kwon, Seoul, KR;
Cha-young Yoo, Suwon, KR;
Abstract
In a method of manufacturing a capacitor by performing a multi-stepped wet treatment on the surface of a metal electrode, a lower metal electrode of a capacitor is formed, and a primary wet treatment is performed on the surface of the lower metal electrode to remove unwanted surface oxides that may exist on the surface of the lower metal electrode. A secondary wet treatment is then performed on the surface of the lower metal electrode by using a different etchant than the etchant used in the primary wet treatment, in order to remove unwanted surface organic materials that may exist on the surface of the lower metal electrode. A dielectric layer is then formed on the lower metal electrode using a high-k dielectric material. An upper metal electrode is formed on the dielectric layer.