The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Jul. 21, 2004
Naoto Fujishima, Nagano, JP;
Akio Sugi, Nagano, JP;
C. Andre T. Salama, Toronto, CA;
Fuji Electric Co., Inc., , JP;
Abstract
A trench-type lateral power MOSFET is manufactured by forming an n-type diffusion region, which will be a drift region, on a p-type substrate; selectively removing a part of substrate and a part of n-type diffusion region to form trenches; forming a gate oxide film of 0.05 μm in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p-type base region and an n-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n-type diffusion region, which will be a drain region, in the surface portion of n-type diffusion region. The MOSFET has reduced device pitch, a reduced on-resistance per unit area and a simplified manufacturing process.