The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Dec. 30, 2003
Joerg Wohlfahrt, Taipei, TW;
Thomas Hladschik, Leca da Palmeira, PT;
Jens Holzhaeuser, Richmond, VA (US);
Dieter Rathei, Graz, AT;
Joerg Wohlfahrt, Taipei, TW;
Thomas Hladschik, Leca da Palmeira, PT;
Jens Holzhaeuser, Richmond, VA (US);
Dieter Rathei, Graz, AT;
Infineon Technologies Richmond LP, Sandston, VA (US);
Abstract
A method of analyzing cells of a memory device is disclosed. Generally, a plurality of fail signatures is generated, wherein each fail signature is associated with a type of failure. Voltages according to a plurality of test patterns are applied to nodes of a cell of the memory device. Fail data of the cell for the plurality of patterns is then analyzed, and a fail signature of the cell is determined. A type of failure of the cell based upon the plurality of fail signatures is then determined. A system for analyzing cells of a memory device is also disclosed. The system generally includes a plurality of probes applying different voltages to a cell of the memory device. A control circuit varies the voltages applied to the cell, and compares the failures of the cell as the test voltage applied to the cell is varied to an artificial bit map. Finally, an output device generates an output indicating a type of failure of the cell.