The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Oct. 11, 2002
George D. Papasouliotis, Cupertino, CA (US);
MD Sazzadur Rahman, Sherwood, OR (US);
Pin Sheng Sun, San Jose, CA (US);
Karen Prichard, Los Gatos, CA (US);
Lauren Hall, San Jose, CA (US);
Vikram Singh, Fremont, CA (US);
George D. Papasouliotis, Cupertino, CA (US);
Md Sazzadur Rahman, Sherwood, OR (US);
Pin Sheng Sun, San Jose, CA (US);
Karen Prichard, Los Gatos, CA (US);
Lauren Hall, San Jose, CA (US);
Vikram Singh, Fremont, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.13 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen and a phosphorus dopant precursor as process gasses in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.