The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Nov. 24, 2003
Grace Sun, Mountain View, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
William K. Barth, Gresham, OR (US);
Sethuraman Lakshminarayanan, San Jose, CA (US);
Sey-shing Sun, Portland, OR (US);
Agajan Suvkhanov, Portland, OR (US);
Hao Cui, West Linn, OR (US);
Grace Sun, Mountain View, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
William K. Barth, Gresham, OR (US);
Sethuraman Lakshminarayanan, San Jose, CA (US);
Sey-Shing Sun, Portland, OR (US);
Agajan Suvkhanov, Portland, OR (US);
Hao Cui, West Linn, OR (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
A method for forming damascene interconnect copper diffusion barrier layers includes implanting calcium into the sidewalls of the trenches and vias. The calcium implantation into dielectric layers, such as oxides, is used to prevent Cu diffusion into oxide, such as during an annealing process step. The improved barrier layers of the present invention help prevent delamination of the Cu from the dielectric.