The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Oct. 13, 2003
Applicants:
Herbert L. Ho, New Windsor, NY (US);
Mahender Kumar, Fishkill, NY (US);
Brian Messenger, Newburgh, NY (US);
Michael D. Steigerwalt, Newburgh, NY (US);
Inventors:
Herbert L. Ho, New Windsor, NY (US);
Mahender Kumar, Fishkill, NY (US);
Brian Messenger, Newburgh, NY (US);
Michael D. Steigerwalt, Newburgh, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for etching a silicon on insulator (SOI) substrate includes opening a hardmask layer formed on an SOI layer, and etching through the SOI layer, a buried insulator layer underneath the SOI layer, and a bulk silicon layer beneath the buried insulator layer using a single etch step.