The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Apr. 22, 2004
Applicants:
Se-hoon OH, Gyeonggi-do, KR;
Jung-hee Chung, Seoul, KR;
Jae-hyoung Choi, Gyeonggi-do, KR;
Jeong-sik Choi, Seoul, KR;
Sung-tae Kim, Seoul, KR;
Cha-young Yoo, Gyeonggi-do, KR;
Inventors:
Se-hoon Oh, Gyeonggi-do, KR;
Jung-hee Chung, Seoul, KR;
Jae-hyoung Choi, Gyeonggi-do, KR;
Jeong-sik Choi, Seoul, KR;
Sung-tae Kim, Seoul, KR;
Cha-young Yoo, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming metal-insulator-metal type capacitors in integrated circuit memory devices can include crystallizing an HfOdielectric layer on a lower electrode of a capacitor structure in a low temperature plasma treatment at a temperature in range between about 250 degrees Centigrade and about 450 degrees Centigrade. An upper electrode can be formed on the HfOdielectric layer.