The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
May. 24, 2002
Shigehiro Nishino, Kyoto, JP;
Kazutoshi Murata, Tamano, JP;
Yoshiharu Chinone, Tokyo, JP;
Mitsui Engineering & Shipbuilding Co., Ltd., Tokyo, JP;
Abstract
The present invention has its object to make it possible to produce an α-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles, and so on, a β-SiC substrateand an SiC raw materialare placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube. The radiation tubeis heated by an induction heating coil, radiates radiation heat, and uniformly heats the cruciblesand so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the β-SiC substrate