The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Nov. 27, 2002
Xin Guo, Mountain View, CA (US);
Nian Yang, San Jose, CA (US);
Zhigang Wang, Santa Clara, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A process technology effectuates production of low defect homogeneous oxynitride, which can be applied in tunneling dielectrics with high dielectric constants and low barrier heights for flash memory devices, and as gate oxide for ultra-thin logic devices. The process technology involves varying the oxygen content in a the homogeneous oxynitride film comprising a part of the flash memory device, which effectively increases the dielectric constant of the oxynitride film and lowers its barrier height. In one such process, a controlled co-flow of NO is introduced into a CVD deposition process. This process effectuates production of a oxynitride film with uniform distributions of nitrogen and oxygen throughout.