The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
May. 11, 2004
Weidong Qian, Sunnyvale, CA (US);
Mark Ramsbey, Sunnyvale, CA (US);
Jean Yee-mei Yang, Sunnyvale, CA (US);
Sameer Haddad, San Jose, CA (US);
Weidong Qian, Sunnyvale, CA (US);
Mark Ramsbey, Sunnyvale, CA (US);
Jean Yee-Mei Yang, Sunnyvale, CA (US);
Sameer Haddad, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
The present invention pertains to implementing a dual poly process in forming a transistor based memory device. The process allows buried bitlines to be formed with less energy and to shallower depths than conventional bitlines to save resources and space, and to improve Vt roll-off. Oxide materials are also formed over the buried bitlines to improve (e.g., increase) a breakdown voltage between the bitlines and wordlines, thus allowing for greater discrimination between programming and erasing charges and more reliable resulting data storage. The process also facilitates a reduction in buried bitline width and thus allows bitlines to be formed closer together. As a result, more devices can be 'packed' within the same or a smaller area.