The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Aug. 06, 2003
Ning Cheng, Cupertino, CA (US);
Hiroyuki Kinoshita, Sunnyvale, CA (US);
Jeff P. Erhardt, San Jose, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Cyrus Tabery, Sunnyvale, CA (US);
Jean Yee-mei Yang, Sunnyvale, CA (US);
Ning Cheng, Cupertino, CA (US);
Hiroyuki Kinoshita, Sunnyvale, CA (US);
Jeff P. Erhardt, San Jose, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Cyrus Tabery, Sunnyvale, CA (US);
Jean Yee-Mei Yang, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A memory device and a method of fabrication are provided. The memory device includes a semiconductor substrate, a bottom dielectric, a charge storing layer, and a top dielectric in a stacked gate configuration. Silicided buried bitlines, which function as a source and a drain, are formed within the substrate. The silicided bitlines have a reduced resistance, which greatly reduces the number of bitline contacts necessary in an array of memory devices.