The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Jul. 03, 2003
Shuichi Irumata, Ibaraki, JP;
Ryo Suzuki, Ibaraki, JP;
Shuichi Irumata, Ibaraki, JP;
Ryo Suzuki, Ibaraki, JP;
Nikko Materials Co., Ltd., , JP;
Abstract
Provided is a hafnium silicide target for forming a gate oxide film composed of HfSi, wherein the oxygen content is 500 to 10000 ppm. Manufactured is a hafnium silicide target for forming a gate oxide film, wherein powder of the composition composed of HfSiis synthesized, pulverized to be 100 mesh or less, and thereafter subject to hot pressing or hot isostatic pressing (HIP) at 1700° C. to 2120° C. and 150 to 2000 kgf/cm. Thereby obtained is a hafnium silicide target, and the manufacturing method thereof, suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film, superior in embrittlement resistance, having a low generation of particles, and which is not likely to cause ignition of sintering powder or explosion of powder dust during the manufacturing process thereof.