The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Sep. 10, 2003
George Stojakovic, Hopewell Junction, NY (US);
Rajiv M. Ranade, Brewster, NY (US);
Ihar Kasko, Fishkill, NY (US);
Joachim Neutzel, Fishkill, NY (US);
Keith R. Milkove, Beacon, NY (US);
Russell D. Allen, Mahopac, NY (US);
Kim Poong Mee Lee, Legal Representative, Hartsdale, NY (US);
George Stojakovic, Hopewell Junction, NY (US);
Rajiv M. Ranade, Brewster, NY (US);
Ihar Kasko, Fishkill, NY (US);
Joachim Neutzel, Fishkill, NY (US);
Keith R. Milkove, Beacon, NY (US);
Russell D. Allen, Mahopac, NY (US);
Kim Poong Mee Lee, legal representative, Hartsdale, NY (US);
Infineon Technologies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of fabricating a magnetic tunnel junction (MTJ) device is provided. A patterned hard mask is oxidized to form a surface oxide thereon. An MTJ stack is etched in alignment with the patterned hard mask after the oxidizing of the patterned hard mask. Preferably, the MTJ stack etch recipe includes chlorine and oxygen. Etch selectivity between the hard mask and the MTJ stack is improved.