The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Jul. 22, 2003
Applicants:
Michael Friedemann, Dresden, DE;
Volker Kahlert, Dresden, DE;
Inventors:
Michael Friedemann, Dresden, DE;
Volker Kahlert, Dresden, DE;
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A conductive barrier layer may be formed within high aspect ratio openings by a two-step ionizing sputter deposition. The first step is performed at low pressure and low bias power to obtain good coverage of upper portions of the openings. In the second step, the bias power and the pressure are raised to improved directionality of the particles while at the same time increasing the scatter events so that an increased deposition rate at critical structure areas is obtained, thereby achieving a good coverage at lower sidewall areas.