The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Dec. 27, 2004
Applicants:
Yee-chia Yeo, Hsin-Chu, TW;
Hao-yu Chen, Kaohsiung, TW;
Hsun-chih Tsao, Hsin-Chu, TW;
Fu-liang Yang, Hsin-Chu, TW;
Chenming HU, Hsin-Chu, TW;
Inventors:
Yee-Chia Yeo, Hsin-Chu, TW;
Hao-Yu Chen, Kaohsiung, TW;
Hsun-Chih Tsao, Hsin-Chu, TW;
Fu-Liang Yang, Hsin-Chu, TW;
Chenming Hu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Ltd. Co., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L023/58 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor-on-insulator structure includes a substrate and a buried insulator layer overlying the substrate. A plurality of semiconductor islands overlie the buried insulator layer. The semiconductor islands are isolated from one another by trenches. A plurality of recess resistant regions overlie the buried insulator layer at a lower surface of the trenches.