The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Feb. 20, 2003
Mark Mcqueen, Boise, ID (US);
Luan C. Tran, Meridian, ID (US);
Chandra Mouli, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention includes a DRAM array having a structure therein which includes a first material separated from a second material by an intervening insulative material. The first material is doped to at least 1×10atoms/cmwith n-type and p-type dopant. The invention also includes a semiconductor construction in which a doped material is over a segment of a substrate. The doped material has a first type majority dopant therein, and is electrically connected with an electrical ground. A pair of conductively-doped diffusion regions are adjacent the segment, and spaced from one another by at least a portion of the segment. The conductively-doped diffusion regions have a second type majority dopant therein. The invention also encompasses methods of forming semiconductor constructions.