The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Mar. 05, 2004
Jörn Lützen, Dresden, DE;
Bernd Goebel, Dresden, DE;
Dirk Schumann, Schönfliess, DE;
Martin Gutsche, Dorfen, DE;
Harald Seidl, Feldkirchen, DE;
Martin Popp, Dresden, DE;
Alfred Kersch, Putzbrunn, DE;
Werner Steinhögl, München, DE;
Jörn Lützen, Dresden, DE;
Bernd Goebel, Dresden, DE;
Dirk Schumann, Schönfliess, DE;
Martin Gutsche, Dorfen, DE;
Harald Seidl, Feldkirchen, DE;
Martin Popp, Dresden, DE;
Alfred Kersch, Putzbrunn, DE;
Werner Steinhögl, München, DE;
Infineon Technologies, AG, , DE;
Abstract
In order to fabricate a semiconductor memory, a trench capacitor is arranged in a first trench. Beside the first trench, a first longitudinal trench and, parallel on the other side of the first trench, a second longitudinal trench are arranged in the substrate. A first spacer word line is arranged in the first longitudinal trench and a second spacer word line is arranged in the second longitudinal trench. There are arranged in the first trench connecting webs between the first spacer word line and the second spacer word line which have a thickness which, in the direction of the first spacer word line, is less than half the width of the first trench in the direction of the first spacer word line.