The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2005

Filed:

May. 30, 2003
Applicants:

Li-peng Wang, San Jose, CA (US);

Michael Dibattista, Santa Clara, CA (US);

Seth Fortuna, Harrisburg, PA (US);

Qing MA, San Jose, CA (US);

Valluri Rao, Saratoga, CA (US);

Inventors:

Li-Peng Wang, San Jose, CA (US);

Michael Dibattista, Santa Clara, CA (US);

Seth Fortuna, Harrisburg, PA (US);

Qing Ma, San Jose, CA (US);

Valluri Rao, Saratoga, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H009/00 ;
U.S. Cl.
CPC ...
Abstract

A material may be removed from the top electrode of a film bulk acoustic resonator to alter the mass loading effect and to adjust the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. Similarly, the piezoelectric layer or the bottom electrode may be selectively milled with a focused ion beam to trim the resonator.


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