The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6975006 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 13, 2005

Filed:

Jul. 25, 2003
Applicants:

Chien-chao Huang, Hsin-Chu, TW;

Tone-xuan Chung, Kaohsiung, TW;

Cheng-chuan Huang, Kinmen, TW;

Fu-liang Yang, Hsin-Chu, TW;

Inventors:

Chien-Chao Huang, Hsin-Chu, TW;

Tone-Xuan Chung, Kaohsiung, TW;

Cheng-Chuan Huang, Kinmen, TW;

Fu-Liang Yang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L031/119 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a substrate and a gate region on top of a substrate. First and second gate sidewall liners are situated on first and second sides of the gate region respectively, the first and second sidewall liners having a vertical part contacting sidewalls of the gate region and a horizontal part contacting the substrate. First and second recessed spacers are situated on top of the first and second sidewall liners respectively. The height of the first and second spacers is lower than the height of the gate sidewall liner whereas the width of the horizontal part of the sidewall liner is shorter than the width of the spacer.


Find Patent Forward Citations

Huang, Chien-Chao. (2005). Semiconductor device with modified channel compressive stress (U.S. Patent No. 6975006). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6975006

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