The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
May. 06, 2004
Cinti X. Chen, Fremont, CA (US);
Boon-yong Ang, Cupertino, CA (US);
Hajime Wada, San Jose, CA (US);
Sameer S. Haddad, San Jose, CA (US);
Inkuk Kang, San Jose, CA (US);
Cinti X. Chen, Fremont, CA (US);
Boon-Yong Ang, Cupertino, CA (US);
Hajime Wada, San Jose, CA (US);
Sameer S. Haddad, San Jose, CA (US);
Inkuk Kang, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
According to one exemplary embodiment, a structure comprises a substrate. The structure further comprises at least one memory cell situated on the substrate. The structure further comprises a first interlayer dielectric layer situated over the at least one memory cell and over the substrate. The structure further comprises an oxide cap layer situated on the first interlayer dielectric layer. According to this exemplary embodiment, the structure further comprises an etch stop layer comprising TCS nitride situated on the oxide cap layer, where the etch stop layer blocks UV radiation. The structure further comprises a second interlayer dielectric layer situated on the etch stop layer. The structure may further comprise a trench situated in the second interlayer dielectric layer and the etch stop layer, where the trench is filled with copper. The structure may further comprise an anti-reflective coating layer situated on the second interlayer dielectric layer.