The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Jul. 22, 2004
Applicant:
James L. Dale, Boise, ID (US);
Inventor:
James L. Dale, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/44 ;
U.S. Cl.
CPC ...
Abstract
Methods to form contact openings and allow the formation of self-aligned contacts for use in the manufacture of semiconductor devices are described. During formation of a multi-layered resist, a hard mask material is introduced beneath an anti-reflective coating to be used as an etch stop layer. The multi-layered resist is patterned and etched, to transfer the desired contact pattern to a substrate material, such as a silicon substrate, to form contact openings therein. The contact openings provide for the formation of self-aligned contacts therein.