The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Oct. 01, 2003
Shih-chi Lai, Hsinchu, TW;
Yifu Chung, Hsinchu, TW;
Yi-chuan Yang, Hsinchu, TW;
Jen-chieh Chang, Hsinchu, TW;
Jason Chien-sung Chu, Hsinchu, TW;
Chun-de Lin, Hsinchu, TW;
Shih-Chi Lai, Hsinchu, TW;
Yifu Chung, Hsinchu, TW;
Yi-Chuan Yang, Hsinchu, TW;
Jen-Chieh Chang, Hsinchu, TW;
Jason Chien-Sung Chu, Hsinchu, TW;
Chun-De Lin, Hsinchu, TW;
Mosel Vitelic, Inc., Hsinchu, TW;
Abstract
Embodiments of the present invention are directed to a method of forming a bottom oxide layer in the trench in semiconductor devices, such as Double-Diffused Metal-Oxide Semiconductor (DMOS) devices. In one embodiment, a method of forming a bottom oxide layer in a trench structure comprises providing a semiconductor substrate; forming a silicon nitride layer on the semiconductor substrate; forming a first oxide layer on the silicon nitride layer; forming a trench structure in the semiconductor substrate; forming a second oxide layer on a bottom and sidewalls of the trench and on a surface of the first oxide layer; removing the first oxide layer and the second oxide layer on the surface of the silicon nitride layer; and removing the second oxide layer on the sidewalls of the trench and a portion of the second oxide layer on the bottom of the trench.