The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Feb. 22, 2002
Applicants:
Hiroto Ohtake, Tokyo, JP;
Shinobu Saitoh, Tokyo, JP;
Munehiro Tada, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Inventors:
Hiroto Ohtake, Tokyo, JP;
Shinobu Saitoh, Tokyo, JP;
Munehiro Tada, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/76 ;
U.S. Cl.
CPC ...
Abstract
In a method of manufacturing a semiconductor device, with respect to a stacked film including a silicon included organic film and a silicon non-included organic film, the silicon non-included organic film is etched by using the etching gas of mixed N2 gas and H2 gas.
Ohtake, Hiroto. (2005). Method of manufacturing a semiconductor device capable of etching a multi-layer of organic films at a high selectivity (U.S. Patent No. 6972453). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6972453
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile